Radovanovic Pavle V, Barrelet Carl J, Gradecak Silvija, Qian Fang, Lieber Charles M
Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, USA.
Nano Lett. 2005 Jul;5(7):1407-11. doi: 10.1021/nl050747t.
A general approach for the synthesis of manganese-doped II-VI and III-V nanowires based on metal nanocluster-catalyzed chemical vapor deposition has been developed. High-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy studies of Mn-doped CdS, ZnS, and GaN nanowires demonstrate that the nanowires are single-crystal structures and homogeneously doped with controllable concentrations of manganese ions. Photoluminescence measurements of individual Mn-doped CdS and ZnS nanowires show characteristic pseudo-tetrahedral Mn2+ ((4)T1-->(6)A1) transitions that match the corresponding transitions in bulk single-crystal materials well. Photoluminescence studies of Mn-doped GaN nanowires suggest that manganese is incorporated as a neutral (Mn3+) dopant that partially quenches the GaN band-edge emission. The general and controlled synthesis of nanowires doped with magnetic metal ions opens up opportunities for fundamental physical studies and could lead to the development of nanoscale spintronic devices.
基于金属纳米团簇催化化学气相沉积法合成锰掺杂的II-VI族和III-V族纳米线的通用方法已经开发出来。对锰掺杂的硫化镉、硫化锌和氮化镓纳米线进行的高分辨率透射电子显微镜和能量色散X射线光谱研究表明，这些纳米线是单晶结构，并且均匀掺杂有可控浓度的锰离子。对单个锰掺杂的硫化镉和硫化锌纳米线的光致发光测量显示出特征性的伪四面体Mn2+（（4）T1→（6）A1）跃迁，与块状单晶材料中的相应跃迁匹配良好。对锰掺杂的氮化镓纳米线的光致发光研究表明，锰作为中性（Mn3+）掺杂剂掺入，部分淬灭了氮化镓的带边发射。掺杂磁性金属离子的纳米线的通用且可控的合成方法为基础物理研究开辟了机会，并可能导致纳米级自旋电子器件的发展。
