Choi Heon-Jin, Shin Jung H, Suh Kiseok, Seong Han-Kyu, Han Hee-Chul, Lee Jung-Chul
School of Advanced Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea.
Nano Lett. 2005 Dec;5(12):2432-7. doi: 10.1021/nl051684h.
Self-organized Si-Er heterostructure nanowires showed promising 1.54 microm Er(3+) optical activity. Si nanowires of about 120-nm diameter were grown vertically on Si substrates by the vapor-liquid-solid mechanism in an Si-Er-Cl-H(2) system using an Au catalyst. Meanwhile, a single-crystalline Er(2)Si(2)O(7) shell sandwiched between nanometer-thin amorphous silica shells was self-organized on the surface of Si nanowires. The nanometer-thin heterostructure shells make it possible to observe a carrier-mediated 1.53 microm Er(3+) photoluminescence spectrum consisting of a series of very sharp peaks. The Er(3+) spectrum and intensity showed absolutely no change as the temperature was increased from 25 to 300 K. The luminescence lifetime at room temperature was found to be 70 micros. The self-organized Si nanowires show great potential as the material basis for developing an Si-based Er light source.
自组织的硅铒异质结构纳米线展现出了有前景的1.54微米铒离子光学活性。直径约120纳米的硅纳米线通过气-液-固机制在硅衬底上垂直生长,生长体系为Si-Er-Cl-H₂体系,使用金催化剂。同时,夹在纳米级非晶二氧化硅壳层之间的单晶Er₂Si₂O₇壳层在硅纳米线表面自组织形成。纳米级的异质结构壳层使得观察到由一系列非常尖锐的峰组成的载流子介导的1.53微米铒离子光致发光光谱成为可能。当温度从25K升高到300K时,铒离子光谱和强度完全没有变化。室温下的发光寿命为70微秒。自组织的硅纳米线作为开发基于硅的铒光源的材料基础具有巨大潜力。