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一种基于Ce2Si2O7的新型紫/蓝光发射器件。

A novel violet/blue light-emitting device based on Ce2Si2O7.

作者信息

Li Ling, Wang Shenwei, Mu Guangyao, Yin Xue, Ou Kai, Yi Lixin

机构信息

Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, 100044, China.

出版信息

Sci Rep. 2015 Nov 13;5:16659. doi: 10.1038/srep16659.

DOI:10.1038/srep16659
PMID:26564241
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4643234/
Abstract

Rare-earth silicates are highly efficient materials for silicon-based light sources. Here we report a novel light-emitting device based on Ce2Si2O7. Intense violet/blue electroluminescence was observed, with a turn-on voltage of about 13 V. The violet/blue emission is attributed to 4f-5d transitions of the Ce(3+) ions in Ce2Si2O7, which are formed by interfacial reaction of CeO2 and Si. Electroluminescence and photoluminescence mechanisms of the Ce2Si2O7 light-emitting device are also discussed.

摘要

稀土硅酸盐是用于硅基光源的高效材料。在此,我们报道了一种基于Ce2Si2O7的新型发光器件。观察到强烈的紫/蓝色电致发光,开启电压约为13V。紫/蓝色发射归因于Ce2Si2O7中Ce(3+)离子的4f-5d跃迁,其由CeO2和Si的界面反应形成。还讨论了Ce2Si2O7发光器件的电致发光和光致发光机制。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dcb/4643234/f0a7ac66bb2c/srep16659-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dcb/4643234/f11719231372/srep16659-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dcb/4643234/a7926f90f378/srep16659-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dcb/4643234/67d527e37025/srep16659-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dcb/4643234/0a1677735b4b/srep16659-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dcb/4643234/274e7dd7c3bd/srep16659-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dcb/4643234/f0a7ac66bb2c/srep16659-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dcb/4643234/f11719231372/srep16659-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dcb/4643234/a7926f90f378/srep16659-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dcb/4643234/67d527e37025/srep16659-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dcb/4643234/0a1677735b4b/srep16659-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dcb/4643234/274e7dd7c3bd/srep16659-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dcb/4643234/f0a7ac66bb2c/srep16659-f6.jpg

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引用本文的文献

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Sci Rep. 2017 Feb 21;7:42479. doi: 10.1038/srep42479.

本文引用的文献

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Opt Express. 2013 Apr 22;21(8):10278-88. doi: 10.1364/OE.21.010278.
2
High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.高质量的单轴 In(x)Ga(1-x)N/GaN 多量子阱(MQW)纳米线(NWs)在 Si(111) 上通过金属有机化学气相沉积(MOCVD)和发光二极管(LED)制造生长。
ACS Appl Mater Interfaces. 2013 Mar;5(6):2111-7. doi: 10.1021/am303056v. Epub 2013 Mar 6.
3
Integrated GaN photonic circuits on silicon (100) for second harmonic generation.
用于二次谐波产生的硅(100)上的集成氮化镓光子电路。
Opt Express. 2011 May 23;19(11):10462-70. doi: 10.1364/OE.19.010462.
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p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111).硅衬底上同质外延 p 型调制掺杂 InGaN/GaN 点线结构白光发光二极管。
Nano Lett. 2011 May 11;11(5):1919-24. doi: 10.1021/nl104536x. Epub 2011 Apr 25.
5
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