Mennecier Samuel, Servant Pascale, Coste Geneviève, Bailone Adriana, Sommer Suzanne
Institut de Génétique et Microbiologie, CNRS UMR 8621, LRC CEA 42V, Bâtiment 409, Université Paris-Sud, F-91405 Orsay Cedex, France.
Mol Microbiol. 2006 Jan;59(1):317-25. doi: 10.1111/j.1365-2958.2005.04936.x.
Analysis of the complete genome indicates that insertion sequences (ISs) are abundant in the radio-resistant bacterium Deinococcus radiodurans. By developing a forward mutagenesis assay to detect any inactivation events in D. radiodurans, we found that in the presence of an active mismatch repair system 75% of the mutations to trimethoprim-resistance (Tmp(R)) resulted from an IS insertion into the thyA coding region. Analysis of their distribution among the spontaneous Tmp(R) mutants indicated that five different ISs were transpositionally active. A type II Miniature Inverted-repeat Transposable Element (MITE), related to one of the deinococcal ISs, was also discovered as an insertion into thyA. Seven additional genomic copies of this MITE element were identified by BLASTN. Gamma-ray irradiation of D. radiodurans led to an increase of up to 10-fold in the frequency of Tmp(R) mutants. Analysis of the induced mutations in cells exposed to 10 kGy indicated that gamma-irradiation induced transposition of ISDra2 approximately 100-fold. A 50-fold induction of ISDra2 transposition was also observed in cells exposed to 600 J m(-2) UV-irradiation. Point mutations to rifampicin resistance (Rif(R)) were also induced by gamma-irradiation to reach a plateau at 2 kGy. The plateau value represented a 16-fold increase in the mutant frequency over the background. Although error-free repair strategies predominate in D. radiodurans, an upregulation of transposition, as well as induction of point mutations in cells recovering from DNA damage, provide a genetic variability that may have long-term evolutionary consequences on the fitness of this organism in its habitat.
对完整基因组的分析表明,插入序列(ISs)在耐辐射细菌耐辐射球菌中大量存在。通过开发一种正向诱变检测方法来检测耐辐射球菌中的任何失活事件,我们发现,在存在活跃错配修复系统的情况下,75%的对甲氧苄啶耐药(Tmp(R))突变是由一个IS插入thyA编码区所致。对它们在自发Tmp(R)突变体中的分布分析表明,有五种不同的IS具有转座活性。还发现一种与耐辐射球菌的一种IS相关的II型微型反向重复转座元件(MITE)插入到了thyA中。通过BLASTN鉴定出该MITE元件的另外七个基因组拷贝。对耐辐射球菌进行伽马射线照射导致Tmp(R)突变体频率增加高达10倍。对暴露于10 kGy的细胞中诱导突变的分析表明,伽马射线照射使ISDra2的转座增加了约100倍。在暴露于600 J m(-2)紫外线照射的细胞中也观察到ISDra2转座增加了50倍。伽马射线照射还诱导了对利福平耐药(Rif(R))的点突变,在2 kGy时达到平台期。该平台期值表示突变频率比背景值增加了16倍。尽管无差错修复策略在耐辐射球菌中占主导地位,但转座的上调以及从DNA损伤中恢复的细胞中的点突变诱导,提供了一种遗传变异性,这可能对该生物体在其栖息地的适应性产生长期的进化影响。