Podzorov V, Menard E, Rogers J A, Gershenson M E
Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey, USA.
Phys Rev Lett. 2005 Nov 25;95(22):226601. doi: 10.1103/PhysRevLett.95.226601. Epub 2005 Nov 21.
We have observed the Hall effect in the field-induced accumulation layer on the surface of single-crystal samples of a small-molecule organic semiconductor rubrene. The Hall mobility muH increases with decreasing temperature in both the intrinsic (high-temperature) and trap-dominated (low-temperature) conduction regimes. In the intrinsic regime, the density of mobile field-induced charge carriers extracted from the Hall measurements, nH, coincides with the density n calculated using the gate-channel capacitance and becomes smaller than n in the trap-dominated regime. The Hall data are consistent with the diffusive bandlike motion of field-induced charge carriers between trapping events.
我们在小分子有机半导体红荧烯单晶样品表面的场致积累层中观测到了霍尔效应。在本征（高温）和陷阱主导（低温）导电区域，霍尔迁移率μH均随温度降低而增加。在本征区域，从霍尔测量中提取的可移动场致电荷载流子密度nH与使用栅极-沟道电容计算出的密度n一致，而在陷阱主导区域，nH小于n。霍尔数据与场致电荷载流子在俘获事件之间的扩散带状运动相一致。
