Calhoun M F, Hsieh C, Podzorov V
Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey, USA.
Phys Rev Lett. 2007 Mar 2;98(9):096402. doi: 10.1103/PhysRevLett.98.096402. Epub 2007 Feb 28.
The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap-dominated p-type organic field-effect transistors has been investigated. It has been observed that the transfer of electrons into the dielectric results in a decrease of the field-effect mobility of polarons, suggesting that additional shallow traps are generated in the conduction channel. Using this effect, the dependence of the field-effect mobility on the density of shallow traps, mu(N), has been measured, which allowed us to estimate the average polaron trapping time, tau_{tr}=50+/-10 ps, and the density of shallow traps, N0=(3+/-0.5) x 10(11) cm(-2), in the channel of single-crystal tetracene devices.
研究了陷阱主导的p型有机场效应晶体管中光致电子和空穴在半导体-电介质界面的转移。据观察，电子向电介质的转移导致极化子的场效应迁移率降低，这表明在传导通道中产生了额外的浅陷阱。利用这一效应，测量了场效应迁移率对浅陷阱密度μ(N)的依赖性，这使我们能够估计单晶并四苯器件通道中的平均极化子俘获时间τtr = 50±10 ps，以及浅陷阱密度N0 =(3±0.5)×10(11) cm(-2)。
