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电子载体如何穿过与硅结合的烷基单分子层?

How do electronic carriers cross Si-bound alkyl monolayers?

作者信息

Salomon Adi, Boecking Till, Chan Calvin K, Amy Fabrice, Girshevitz Olga, Cahen David, Kahn Antoine

机构信息

Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, Israel.

出版信息

Phys Rev Lett. 2005 Dec 31;95(26):266807. doi: 10.1103/PhysRevLett.95.266807. Epub 2005 Dec 23.

Abstract

Electron transport through Si-C bound alkyl chains, sandwiched between and Hg, is characterized by two distinct types of barriers, each dominating in a different voltage range. At low voltage, the current depends strongly on temperature but not on molecular length, suggesting transport by thermionic emission over a barrier in the Si. At higher voltage, the current decreases exponentially with molecular length, suggesting transport limited by tunneling through the molecules. The tunnel barrier is estimated, from transport and photoemission data, to be approximately 1.5 eV with a 0.25m(e) effective mass.

摘要

夹在硅和汞之间的通过硅 - 碳键合烷基链的电子传输具有两种不同类型的势垒,每种势垒在不同的电压范围内占主导。在低电压下,电流强烈依赖于温度但不依赖于分子长度,这表明是通过热电子发射越过硅中的势垒进行传输。在较高电压下,电流随分子长度呈指数下降,这表明传输受限于通过分子的隧穿。根据传输和光发射数据估计,隧穿势垒约为1.5电子伏特,有效质量为0.25m(e)。

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