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通过压痕胶体晶体观察位错形核

Visualizing dislocation nucleation by indenting colloidal crystals.

作者信息

Schall Peter, Cohen Itai, Weitz David A, Spaepen Frans

机构信息

Division of Engineering and Applied Sciences, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138, USA.

出版信息

Nature. 2006 Mar 16;440(7082):319-23. doi: 10.1038/nature04557.

Abstract

The formation of dislocations is central to our understanding of yield, work hardening, fracture, and fatigue of crystalline materials. While dislocations have been studied extensively in conventional materials, recent results have shown that colloidal crystals offer a potential model system for visualizing their structure and dynamics directly in real space. Although thermal fluctuations are thought to play a critical role in the nucleation of these defects, it is difficult to observe them directly. Nano-indentation, during which a small tip deforms a crystalline film, is a common tool for introducing dislocations into a small volume that is initially defect-free. Here, we show that an analogue of nano-indentation performed on a colloidal crystal provides direct images of defect formation in real time and on the single particle level, allowing us to probe the effects of thermal fluctuations. We implement a new method to determine the strain tensor of a distorted crystal lattice and we measure the critical dislocation loop size and the rate of dislocation nucleation directly. Using continuum models, we elucidate the relation between thermal fluctuations and the applied strain that governs defect nucleation. Moreover, we estimate that although bond energies between particles are about fifty times larger in atomic systems, the difference in attempt frequencies makes the effects of thermal fluctuations remarkably similar, so that our results are also relevant for atomic crystals.

摘要

位错的形成是我们理解晶体材料的屈服、加工硬化、断裂和疲劳的核心。虽然位错在传统材料中已得到广泛研究,但最近的结果表明,胶体晶体提供了一个潜在的模型系统,可直接在真实空间中可视化其结构和动力学。尽管热涨落被认为在这些缺陷的成核过程中起关键作用,但很难直接观察到它们。纳米压痕是一种常用工具,在该过程中一个小尖端使晶体薄膜变形,从而将位错引入到一个初始无缺陷的小体积区域中。在这里,我们表明在胶体晶体上进行的纳米压痕模拟能够实时且在单粒子水平上提供缺陷形成的直接图像,使我们能够探究热涨落的影响。我们实施了一种新方法来确定畸变晶格的应变张量,并直接测量临界位错环尺寸和位错成核速率。使用连续介质模型,我们阐明了热涨落与控制缺陷成核的外加应变之间的关系。此外,我们估计尽管原子系统中粒子间的键能大约大五十倍,但尝试频率的差异使得热涨落的影响非常相似,因此我们的结果对于原子晶体也具有相关性。

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