Mitterbauer Christoph, Grogger Werner, Wilhartitz Peter, Hofer Ferdinand
Research Institute for Electron Microscopy, Graz University of Technology, Steyrergasse 17, A-8010 Graz, Austria.
Micron. 2006;37(5):385-8. doi: 10.1016/j.micron.2006.01.006. Epub 2006 Feb 24.
The aim of this work is to monitor changes of the N-K electron energy-loss near-edge structure (ELNES) of chromium nitride layers (CrN) introduced by electron irradiation in a transmission electron microscope (TEM). These changes are different for each sample material and seem to give an indication for a particular composition. The CrN samples (CrN and Cr(0.47)N(0.53)) were prepared on silicon wafers by reactive magnetron sputtering of a metallic chromium target in nitrogen plasma. In addition, a CrON sample (Cr(0.5)O(0.2)N(0.3)) was also investigated. This sample was prepared by the addition of oxygen to the plasma during film deposition. The ELNES of the N-K ionization edge of stoichiometric CrN shows a typical fine structure (peaks at 399.0 and 401.1 eV) and remains nearly unaffected even after high-current-density irradiation. On the other hand the N-K fine structures of Cr(0.47)N(0.53) and Cr(0.5)O(0.2)N(0.3) show a change of the ELNES with irradiation dose. This presumably arises from a 1s-pi*-transition of molecular nitrogen located at interstitial positions in these samples.
这项工作的目的是监测在透射电子显微镜（TEM）中电子辐照引入的氮化铬层（CrN）的N - K电子能量损失近边结构（ELNES）的变化。这些变化因每种样品材料而异，似乎为特定成分提供了一个指示。CrN样品（CrN和Cr(0.47)N(0.53)）通过在氮等离子体中对金属铬靶进行反应磁控溅射制备在硅片上。此外，还研究了一个CrON样品（Cr(0.5)O(0.2)N(0.3)）。该样品通过在薄膜沉积过程中向等离子体中添加氧气制备。化学计量比的CrN的N - K电离边缘的ELNES显示出典型的精细结构（在399.0和401.1 eV处有峰值），即使在高电流密度辐照后也几乎不受影响。另一方面，Cr(0.47)N(0.53)和Cr(0.5)O(0.2)N(0.3)的N - K精细结构显示出ELNES随辐照剂量的变化。这大概是由于位于这些样品间隙位置的分子氮的1s - π*跃迁引起的。
