Cohen Ariel, Shappir Joseph, Yitzchaik Shlomo, Spira Micha E
Department of Neurobiology, The Life Sciences Institute, The Hebrew University of Jerusalem, Jerusalem 91904, Israel.
Biosens Bioelectron. 2006 Dec 15;22(5):656-63. doi: 10.1016/j.bios.2006.02.005. Epub 2006 Mar 29.
Understanding the mechanisms that generate field potentials (FPs) by neurons grown on semiconductor chips is essential for implementing neuro-electronic devices. Earlier studies emphasized that FPs are generated by current flow between differentially expressed ion channels on the membranes facing the chip surface, and those facing the culture medium in electrically compact cells. Less is known, however, about the mechanisms that generate FPs by action potentials (APs) that propagate along typical non-isopotential neurons. Using Aplysia neurons cultured on floating gate-transistors, we found that the FPs generated by APs in cultured neurons are produced by current flow along neuronal compartments comprising the axon, cell body, and neurites, rather than by flow between the membrane facing the chip substrate and that facing the culture medium. We demonstrate that the FPs waveform generated by non-isopotential neurons largely depends on the morphology of the neuron.
了解在半导体芯片上生长的神经元产生场电位(FPs)的机制对于实现神经电子设备至关重要。早期研究强调,场电位是由面对芯片表面的膜上和面对电致密细胞中培养基的膜上差异表达的离子通道之间的电流流动产生的。然而,对于沿典型的非等电位神经元传播的动作电位(APs)产生场电位的机制了解较少。使用培养在浮栅晶体管上的海兔神经元,我们发现培养神经元中动作电位产生的场电位是由沿着包括轴突、细胞体和神经突的神经元区室的电流流动产生的,而不是由面对芯片基板的膜和面对培养基的膜之间的电流流动产生的。我们证明,非等电位神经元产生的场电位波形在很大程度上取决于神经元的形态。