Yeh P H, Chen L J, Liu P T, Wang D Y, Chang T C
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC.
J Nanosci Nanotechnol. 2007 Jan;7(1):339-43.
Metal-oxide-semiconductor structures with NiSi2 and CoSi2 nanocrystals embedded in the SiO2 layer have been fabricated. A pronounced capacitance-voltage hysteresis was observed with a memory window about 1 V under low programming voltage. The retention characteristic can be improved by using HfO2 layer as control oxide. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.
已制备出在SiO₂层中嵌入NiSi₂和CoSi₂纳米晶体的金属氧化物半导体结构。在低编程电压下观察到明显的电容 - 电压滞后现象，记忆窗口约为1V。通过使用HfO₂层作为控制氧化物可以改善保持特性。该结构的工艺与半导体行业当前的制造技术兼容。
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