Shen Guozhen, Bando Yoshio, Tang Chengchun, Golberg Dmitri
Advanced Materials Laboratory, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.
J Phys Chem B. 2006 Apr 13;110(14):7199-202. doi: 10.1021/jp060006w.
Novel hierarchical heterostructures formed by wrapping ZnS nanowires with highly dense SiO(2) nanowires were successfully synthesized by a vapor-liquid-solid process. The as-synthesized products were characterized using X-ray diffraction, scanning electron microscopy and transmission electron microscopy equipped with an energy-dispersive X-ray spectrometer. Studies indicate that a typical hierarchical ZnS/SiO(2) heterostructure consists of a single-crystalline ZnS nanowire (core) with diameter gradually decreasing from several hundred nanometers to 20 nm and adjacent amorphous SiO(2) nanowires (branches) with diameters of about 20 nm. A possible growth mechanism was also proposed for the growth of the hierarchical heterostructures.
通过气-液-固过程成功合成了由高密度SiO₂纳米线包裹ZnS纳米线形成的新型分级异质结构。使用配备能量色散X射线光谱仪的X射线衍射、扫描电子显微镜和透射电子显微镜对合成产物进行了表征。研究表明,典型的分级ZnS/SiO₂异质结构由直径从几百纳米逐渐减小到20nm的单晶ZnS纳米线(芯)和直径约20nm的相邻非晶SiO₂纳米线(分支)组成。还提出了分级异质结构生长的一种可能生长机制。