Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, 2999 Renmin Rd, North, 201620, Songjiang District, Shanghai, People's Republic of China.
Nanoscale Res Lett. 2009 Oct 29;5(1):231-6. doi: 10.1007/s11671-009-9470-z.
Novel hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays were fabricated on silicon substrates by a one-step thermal evaporation of CdS powder. The as-grown products were characterized using scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Studies reveal that a typical hierarchical Cd4SiS6/SiO2 heterostructure nanowire is composed of a single crystalline Cd4SiS6 nanowire core sheathed with amorphous SiO2 sheath. Furthermore, secondary nanostructures of SiO2 nanowires are highly dense grown on the primary Cd4SiS6 core-SiO2 sheath nanowires and formed hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays which stand vertically on silicon substrates. The possible growth mechanism of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays is proposed. The optical properties of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays are investigated using Raman and Photoluminescence spectroscopy.
新型分级 Cd4SiS6/SiO2 基异质结构纳米线阵列通过 CdS 粉末的一步热蒸发在硅衬底上制备。使用扫描电子显微镜、X 射线衍射和透射电子显微镜对生长的产物进行了表征。研究表明,典型的分级 Cd4SiS6/SiO2 异质结构纳米线由单晶 Cd4SiS6 纳米线核和非晶 SiO2 鞘组成。此外,SiO2 纳米线的二次纳米结构在初级 Cd4SiS6 核-SiO2 鞘纳米线高度密集生长,并形成了垂直于硅衬底的分级 Cd4SiS6/SiO2 基异质结构纳米线阵列。提出了分级 Cd4SiS6/SiO2 异质结构纳米线阵列的可能生长机制。使用拉曼和光致发光光谱研究了分级 Cd4SiS6/SiO2 异质结构纳米线阵列的光学性质。