Schmidbauer M, Seydmohamadi Sh, Grigoriev D, Wang Zh M, Mazur Yu I, Schäfer P, Hanke M, Köhler R, Salamo G J
Institut für Kristallzüchtung, D-12489 Berlin, Germany.
Phys Rev Lett. 2006 Feb 17;96(6):066108. doi: 10.1103/PhysRevLett.96.066108. Epub 2006 Feb 15.
Anisotropic surface diffusion and strain are used to explain the formation of three-dimensional (In,Ga)As quantum dot lattices. The diffusion characteristics of the surface, coupled with the elastic anisotropy of the matrix, provides an excellent opportunity to influence the dot positions. In particular, quantum dots that are laterally organized into long chains or chessboard two-dimensional arrays vertically organized with strict vertical ordering or vertical ordering that is inclined to the sample surface normal are accurately predicted and observed.
各向异性表面扩散和应变被用于解释三维（铟镓）砷量子点晶格的形成。表面的扩散特性，再加上基体的弹性各向异性，为影响量子点位置提供了绝佳机会。特别是，能够准确预测并观察到量子点横向排列成长链状，或二维棋盘状阵列，且这些阵列在垂直方向上具有严格的垂直有序排列，或者相对于样品表面法线呈倾斜的垂直有序排列。
