Kher R S, Brahme N, Banerjee M, Dhoble S J, Khokhar M S K
Department of Physics, Government Science P.G. College, Bilaspur 495 006, C.G., India.
Radiat Prot Dosimetry. 2006;119(1-4):62-5. doi: 10.1093/rpd/nci606. Epub 2006 May 12.
Calcium fluoride CaF2 is an interesting host lattice for rare earth (RE) activators. CaF2 crystals doped with different concentrations of Dy, Ce, Er and Gd have been grown by the Bridgman technique and their deformation luminescence (DL) induced by room temperature gamma irradiation has been recorded. When a uniaxial pressure is applied on to gamma-irradiated CaF2:RE crystals, initially the DL intensity increases with time, attains a maximum value and then it decreases with time. Although the DL intensity produced during the release of pressure is less, its rise and decay behaviours are similar to that obtained during the application of pressure. The DL intensity depends on dopant, concentration of dopant, irradiation doses and mass of the load or applied pressure. It is suggested that the moving dislocation produced during deformation of crystals capture holes from hole trapped centres (like perturbed Vk centre) and the subsequent radiative recombination of the dislocation holes with electrons give rise to DL.
氟化钙（CaF₂）是一种适用于稀土（RE）激活剂的有趣基质晶格。采用布里奇曼技术生长了掺杂不同浓度镝（Dy）、铈（Ce）、铒（Er）和钆（Gd）的CaF₂晶体，并记录了室温γ射线辐照诱导的其形变发光（DL）。当对γ射线辐照的CaF₂:RE晶体施加单轴压力时，起初DL强度随时间增加，达到最大值后随时间降低。尽管在压力释放过程中产生的DL强度较小，但其上升和衰减行为与施加压力时相似。DL强度取决于掺杂剂、掺杂剂浓度、辐照剂量以及负载质量或施加的压力。有人认为，晶体形变过程中产生的移动位错从空穴俘获中心（如受扰Vk中心）捕获空穴，位错空穴随后与电子进行辐射复合从而产生DL。
