Holt S A, Brown A S, Creagh D C, Leon R
School of Physics, University College, University of New South Wales, Northcott Drive, Canberra, ACT 2600, Australia.
J Synchrotron Radiat. 1997 May 1;4(Pt 3):169-74. doi: 10.1107/S0909049597004123.
X-ray reflectivity and grazing-incidence X-ray diffraction techniques have been employed to investigate the structure of quantum-well and quantum-dot semiconductor devices. This work has been performed using both laboratory and synchrotron radiation sources. The use of synchrotron radiation enabled reflectivity studies to be performed on small samples, and established the feasibility of imaging-grazing-incidence diffraction studies on quantum-confinement structures. Interdiffusion effects in quantum-well and quantum-dot structures, the disordering of overlayers grown on quantum dots, and the variation in diffraction pattern with incident angle have been observed. It is evident that X-ray reflectivity and imaging-grazing-incidence X-ray diffraction yield quite different but complementary information.
X射线反射率和掠入射X射线衍射技术已被用于研究量子阱和量子点半导体器件的结构。这项工作是使用实验室和同步辐射源进行的。同步辐射的使用使得能够对小样品进行反射率研究，并确立了对量子限制结构进行成像掠入射衍射研究的可行性。已观察到量子阱和量子点结构中的互扩散效应、量子点上生长的覆盖层的无序化以及衍射图案随入射角的变化。很明显，X射线反射率和成像掠入射X射线衍射产生了截然不同但互补的信息。
