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O(³P)与C₂H₂反应的量子化学和理论动力学研究:一个多态过程

Quantum chemical and theoretical kinetics study of the O(3P) + C2H2 reaction: a multistate process.

作者信息

Nguyen Thanh Lam, Vereecken Luc, Peeters Jozef

机构信息

Department of Chemistry, University of Leuven, Celestijnenlaan 200F, B-3001 Leuven, Belgium.

出版信息

J Phys Chem A. 2006 Jun 1;110(21):6696-706. doi: 10.1021/jp055961k.

Abstract

The potential energy surfaces of the two lowest-lying triplet electronic surfaces 3A'' and 3A' for the O(3P) + C2H2 reaction were theoretically reinvestigated, using various quantum chemical methods including CCSD(T), QCISD, CBS-QCI/APNO, CBS-QB3, G2M(CC,MP2), DFT-B3LYP and CASSCF. An efficient reaction pathway on the electronically excited 3A' surface resulting in H(2S) + HCCO(A2A') was newly identified and is predicted to play an important role at higher temperatures. The primary product distribution for the multistate multiwell reaction was then determined by RRKM statistical rate theory and weak-collision master equation analysis using the exact stochastic simulation method. Allowing for nonstatistical behavior of the internal rotation mode of the initial 3A'' adducts, our computed primary-product distributions agree well with the available experimental results, i.e., ca. 80% H(2S) + HCCO(X2A'' + A2A') and 20% CH2(X3B1) + CO(X1sigma+) independent of temperature and pressure over the wide 300-2000 K and 0-10 atm ranges. The thermal rate coefficient k(O + C2H2) at 200-2000 K was computed using multistate transition state theory: k(T) = 6.14 x 10(-15)T (1.28) exp(-1244 K/T) cm3 molecule(-1) s(-1); this expression, obtained after reducing the CBS-QCI/APNO ab initio entrance barriers by 0.5 kcal/mol, quasi-perfectly matches the experimental k(T) data over the entire 200-2000 K range, spanning 3 orders of magnitude.

摘要

利用包括CCSD(T)、QCISD、CBS-QCI/APNO、CBS-QB3、G2M(CC,MP2)、DFT-B3LYP和CASSCF在内的各种量子化学方法,对O(³P)+C₂H₂反应的两个最低三重态电子表面³A''和³A'的势能面进行了理论再研究。新发现了一条在电子激发的³A'表面上产生H(²S)+HCCO(A²A')的有效反应途径,并预计在较高温度下发挥重要作用。然后,通过RRKM统计速率理论和使用精确随机模拟方法的弱碰撞主方程分析,确定了多态多阱反应的初级产物分布。考虑到初始³A''加合物内旋转模式的非统计行为,我们计算得到的初级产物分布与现有实验结果吻合良好,即在300 - 2000 K和0 - 10 atm的宽范围内,约80%为H(²S)+HCCO(X²A'' + A²A'),20%为CH₂(X³B₁)+CO(X¹σ⁺),与温度和压力无关。使用多态过渡态理论计算了200 - 2000 K下的热速率系数k(O + C₂H₂):k(T)=6.14×10⁻¹⁵T¹·²⁸ exp(-1244 K/T) cm³ molecule⁻¹ s⁻¹;该表达式是在将CBS-QCI/APNO从头算入口势垒降低0.5 kcal/mol后得到的,在整个200 - 2000 K范围内,跨越3个数量级,与实验k(T)数据近乎完美匹配。

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