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烷基化硅(111)表面的高分辨率X射线光电子能谱研究。

High-resolution X-ray photoelectron spectroscopic studies of alkylated silicon(111) surfaces.

作者信息

Webb Lauren J, Nemanick E Joseph, Biteen Julie S, Knapp David W, Michalak David J, Traub Matthew C, Chan Ally S Y, Brunschwig Bruce S, Lewis Nathan S

机构信息

Division of Chemistry and Chemical Engineering, California Institute of Technology, 210 Noyes Laboratory, 127-72, Pasadena, California 91125, USA.

出版信息

J Phys Chem B. 2005 Mar 10;109(9):3930-7. doi: 10.1021/jp047199c.

Abstract

Hydrogen-terminated, chlorine-terminated, and alkyl-terminated crystalline Si(111) surfaces have been characterized using high-resolution, soft X-ray photoelectron spectroscopy from a synchrotron radiation source. The H-terminated Si(111) surface displayed a Si 2p(3/2) peak at a binding energy 0.15 eV higher than the bulk Si 2p(3/2) peak. The integrated area of this shifted peak corresponded to one equivalent monolayer, consistent with the assignment of this peak to surficial Si-H moieties. Chlorinated Si surfaces prepared by exposure of H-terminated Si to PCl5 in chlorobenzene exhibited a Si 2p(3/2) peak at a binding energy of 0.83 eV above the bulk Si peak. This higher-binding-energy peak was assigned to Si-Cl species and had an integrated area corresponding to 0.99 of an equivalent monolayer on the Si(111) surface. Little dichloride and no trichloride Si 2p signals were detected on these surfaces. Silicon(111) surfaces alkylated with CnH(2n+1)- (n = 1 or 2) or C6H5CH2- groups were prepared by exposing the Cl-terminated Si surface to an alkylmagnesium halide reagent. Methyl-terminated Si(111) surfaces prepared in this fashion exhibited a Si 2p(3/2) signal at a binding energy of 0.34 eV above the bulk Si 2p(3/2) peak, with an area corresponding to 0.85 of a Si(111) monolayer. Ethyl- and C6H5CH2-terminated Si(111) surfaces showed no evidence of either residual Cl or oxidized Si and exhibited a Si 2p(3/2) peak approximately 0.20 eV higher in energy than the bulk Si 2p(3/2) peak. This feature had an integrated area of approximately 1 monolayer. This positively shifted Si 2p(3/2) peak is consistent with the presence of Si-C and Si-H surface functionalities on such surfaces. The SXPS data indicate that functionalization by the two-step chlorination/alkylation process proceeds cleanly to produce oxide-free Si surfaces terminated with the chosen alkyl group.

摘要

利用来自同步辐射源的高分辨率软X射线光电子能谱对氢端基、氯端基和烷基端基的晶体硅(111)表面进行了表征。氢端基的硅(111)表面在结合能比体相硅2p(3/2)峰高0.15 eV处显示出一个硅2p(3/2)峰。这个位移峰的积分面积对应于一个等效单层,这与将该峰归属于表面硅氢基团的结果一致。通过将氢端基的硅暴露于氯苯中的五氯化磷制备的氯化硅表面,在比体相硅峰高0.83 eV的结合能处显示出一个硅2p(3/2)峰。这个更高结合能的峰被归属于硅氯物种,其积分面积对应于硅(111)表面0.99个等效单层。在这些表面上未检测到二氯化物和三氯化物的硅2p信号。通过将氯端基的硅表面暴露于烷基卤化镁试剂制备了用CnH(2n+1)-(n = 1或2)或C6H5CH2-基团烷基化的硅(111)表面。以这种方式制备的甲基端基的硅(111)表面在比体相硅2p(3/2)峰高0.34 eV的结合能处显示出一个硅2p(3/2)信号,其面积对应于硅(111)单层的0.85。乙基和苄基端基的硅(111)表面没有残留氯或氧化硅的迹象,并且显示出一个比体相硅2p(3/2)峰能量高约0.20 eV的硅2p(3/2)峰。这个特征的积分面积约为1个单层。这个正向位移的硅2p(3/2)峰与这些表面上存在硅碳和硅氢表面官能团一致。同步辐射光电子能谱数据表明,通过两步氯化/烷基化过程进行的功能化反应能够顺利进行,从而产生以所选烷基为端基的无氧化物硅表面。

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