Li Wenjie, Kavanagh Karen L, Matzke Carolyn M, Talin A Alec, Léonard François, Faleev Sergey, Hsu Julia W P
Department of Physics, Simon Fraser University, Burnaby, BC, V5A 1S6, Canada.
J Phys Chem B. 2005 Apr 7;109(13):6252-6. doi: 10.1021/jp0501648.
We present nanometer-scale resolution, ballistic electron emission microscopy (BEEM) studies of Au/octanedithiol/n-GaAs (001) diodes. The presence of the molecule dramatically increases the BEEM threshold voltage and displays an unusual transport signature as compared to reference Au/GaAs diodes. Furthermore, BEEM images indicate laterally inhomogeneous interfacial structure. We present calculations that address the role of the molecular layer at the interface. Our results indicate that spatially resolved measurements add new insight to studies using conventional spatial-averaging techniques.
我们展示了对金/辛二硫醇/n-砷化镓（001）二极管的纳米级分辨率弹道电子发射显微镜（BEEM）研究。与参考金/砷化镓二极管相比，该分子的存在显著提高了BEEM阈值电压，并显示出异常的传输特征。此外，BEEM图像表明界面结构在横向是不均匀的。我们给出的计算结果揭示了界面处分子层的作用。我们的结果表明，空间分辨测量为使用传统空间平均技术的研究提供了新的见解。
