Goh Kuan Eng J, Bannani A, Troadec C
Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, 117602, Singapore.
Nanotechnology. 2008 Nov 5;19(44):445718. doi: 10.1088/0957-4484/19/44/445718. Epub 2008 Oct 2.
The well-known Au/n-Si(111) Schottky interface is modified by a discontinuous pentacene film (∼1.5 nm thick) and studied using spatially resolved ballistic electron emission spectroscopy (BEES). The pentacene film introduced subtle changes to the interface which cannot be definitively detected by current-voltage measurements or a standard BEES analysis of the barrier height. In contrast, analyzing the BEES results in a dual-parameter (transmission attenuation and barrier height) space allows the effect of the pentacene film on the Au/n-Si(111) interface to be clearly demonstrated. We found that the pentacene film behaves like a tunneling barrier and increases the distribution of local barrier heights with a tendency toward lower values. Our results highlight the potential of the dual-parameter BEES analysis for understanding local interface modification by molecules.
通过非连续的并五苯薄膜（约1.5纳米厚）对著名的金/硅（111）肖特基界面进行修饰，并使用空间分辨弹道电子发射光谱（BEES）进行研究。并五苯薄膜给界面带来了细微变化，而这些变化无法通过电流 - 电压测量或对势垒高度的标准BEES分析明确检测到。相比之下，在双参数（传输衰减和势垒高度）空间中分析BEES结果能够清晰地展示并五苯薄膜对金/硅（111）界面的影响。我们发现并五苯薄膜表现得像一个隧道势垒，并增加了局部势垒高度的分布，且有向更低值发展的趋势。我们的结果突出了双参数BEES分析在理解分子对局部界面修饰方面的潜力。
