Anariba Franklin, Steach Jeremy K, McCreery Richard L
Department of Chemistry, The Ohio State University, 100 West 18th Avenue, Columbus, Ohio 43210, USA.
J Phys Chem B. 2005 Jun 9;109(22):11163-72. doi: 10.1021/jp051093f.
Carbon/molecule/copper molecular electronic junctions were fabricated by metal deposition of copper onto films of various thicknesses of fluorene (FL), biphenyl (BP), and nitrobiphenyl (NBP) covalently bonded to flat, graphitic carbon. A "crossed-wire" junction configuration provided high device yield and good junction reproducibility. Current/voltage characteristics were investigated for 69 junctions with various molecular structures and thicknesses and at several temperatures. The current/voltage curves for all cases studied were nearly symmetric, scan rate independent, repeatable at least thousands of cycles and exhibited negligible hysteresis. Junction conductance was strongly dependent on the dihedral angle between phenyl rings and on the nature of the molecule/copper "contact". Junctions made with NBP showed a decrease in conductivity of a factor of 1300 when the molecular layer thickness increased from 1.6 to 4.5 nm. The slope of ln(i) vs layer thickness for both BP and NBP was weakly dependent on applied voltage and ranged from 0.16 to 0.24 A(-1). These attenuation factors are similar to those observed for similar molecular layers on modified electrodes used to study electrochemical kinetics. All junctions studied showed weak temperature dependence in the range of approximately 325 to 214 K, implying activation barriers in the range of 0.06 to 0.15 eV. The carbon/molecule/copper junction structure provides a robust, reproducible platform for investigations of the dependence of electron transport in molecular junctions on both molecular structure and temperature. Furthermore, the results indicate that junction conductance is a strong function of molecular structure, rather than some artifact resulting from junction fabrication.
通过将铜金属沉积到共价键合在平面石墨碳上的不同厚度的芴(FL)、联苯(BP)和硝基联苯(NBP)薄膜上,制备了碳/分子/铜分子电子结。“交叉线”结结构提供了高器件产率和良好的结重现性。研究了69个具有不同分子结构、厚度以及在几个温度下的结的电流/电压特性。所有研究案例的电流/电压曲线几乎都是对称的,与扫描速率无关,至少可重复数千个循环,并且滞后现象可忽略不计。结电导强烈依赖于苯环之间的二面角以及分子/铜“接触”的性质。当分子层厚度从1.6纳米增加到4.5纳米时,用NBP制成的结的电导率下降了1300倍。BP和NBP的ln(i)与层厚度的斜率对施加电压的依赖性较弱,范围为0.16至0.24 A⁻¹。这些衰减因子与用于研究电化学动力学的修饰电极上类似分子层所观察到的衰减因子相似。所有研究的结在大约325至214 K的范围内显示出较弱的温度依赖性,这意味着激活势垒在0.06至0.15 eV的范围内。碳/分子/铜结结构为研究分子结中电子传输对分子结构和温度的依赖性提供了一个稳健、可重现的平台。此外,结果表明结电导是分子结构的强函数,而不是结制备产生的某种假象。