Chen Haiyan, Aleksandrov Alex, Chen Yanfeng, Zha Shaowu, Liu Meilin, Orlando Thomas M
School of Chemistry and Biochemistry, and School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
J Phys Chem B. 2005 Jun 9;109(22):11257-62. doi: 10.1021/jp044161r.
Polycrystalline gadolinia-doped ceria (GDC) surfaces were studied using low-energy (5-400 eV) electron stimulated desorption (ESD). H(+), O(+), and H(3)O(+) were the primary cationic desorption products with H(+) as the dominant channel. H(+), H(3)O(+), and O(+) have a 22 eV threshold followed by a yield change around 40 eV. H(+) also has an additional yield change approximately 75 eV and O(+) has an additional change approximately 150 eV. The O(+) ESD yield change approximately 150 eV may indicate bond breaking of Gd-O and the involvement of oxygen vacancies. The H(+) and H(3)O(+) threshold data collectively indicate the presence of hydroxyl groups and chemisorbed water molecules on the GDC surfaces. ESD temperature dependence measurements show that the interaction of water with GDC surface defect sites, mainly oxygen vacancies, influences the desorption of H(+), O(+), and H(3)O(+). The temperature dependence of the O(+) ESD at 400 eV incident electron energy yields a 0.21 eV activation energy. This is close to the energy needed for oxygen vacancy production next to a pair of Ce(3+) on a CeO(2) surface. These results may indicate a correlation between the O(+) ESD yield and oxygen vacancy density on GDC surfaces and a potential correlation of O(+) ESD and GDC ionic conductivity.
采用低能(5 - 400 eV)电子激发脱附(ESD)技术对多晶钆掺杂二氧化铈(GDC)表面进行了研究。H(+)、O(+)和H(3)O(+)是主要的阳离子脱附产物,其中H(+)为主要通道。H(+)、H(3)O(+)和O(+)具有22 eV的阈值,随后在40 eV左右产率发生变化。H(+)在约75 eV处还有额外的产率变化,O(+)在约150 eV处有额外变化。O(+)的ESD产率在约150 eV处的变化可能表明Gd - O键断裂以及氧空位的参与。H(+)和H(3)O(+)的阈值数据共同表明GDC表面存在羟基和化学吸附的水分子。ESD温度依赖性测量表明,水与GDC表面缺陷位点(主要是氧空位)的相互作用会影响H(+)、O(+)和H(3)O(+)的脱附。在400 eV入射电子能量下,O(+)的ESD温度依赖性产生了0.21 eV的活化能。这接近于在CeO(2)表面一对Ce(3+)旁边产生氧空位所需的能量。这些结果可能表明GDC表面O(+)的ESD产率与氧空位密度之间存在相关性,以及O(+)的ESD与GDC离子电导率之间可能存在相关性。