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自组装纳米颗粒薄膜中增强的电子充电阈值的门控

Gating of enhanced electron-charging thresholds in self-assembled nanoparticle films.

作者信息

Suganuma Yoshinori, Dhirani Al-Amin

机构信息

Department of Chemistry, University of Toronto, Toronto, Ontario, Canada.

出版信息

J Phys Chem B. 2005 Aug 18;109(32):15391-6. doi: 10.1021/jp051282y.

Abstract

Films of butanedithiol interconnected nanoparticles can exhibit a percolation-driven insulating to metal transition. To explore properties of materials with interpolating behavior, we have measured conductance of these films with systematically varying thickness. Films below a certain threshold coverage exhibit thermally assisted conductance and conductance suppression near zero bias indicative of single-electron-charging barriers. In analogy with semiconductors, we show that these films permit transistor-type gating of film conductivity.

摘要

由丁二硫醇互连纳米颗粒构成的薄膜可呈现出由渗流驱动的绝缘到金属的转变。为了探索具有插值行为的材料的特性,我们测量了这些厚度系统变化的薄膜的电导率。低于某个阈值覆盖率的薄膜表现出热辅助电导率以及在零偏压附近的电导率抑制,这表明存在单电子充电势垒。与半导体类似,我们表明这些薄膜允许对薄膜电导率进行晶体管型栅控。

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