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交流电沉积条件对多孔氧化铝模板中高纵横比铜纳米线生长的影响。

Effect of ac electrodeposition conditions on the growth of high aspect ratio copper nanowires in porous aluminum oxide templates.

作者信息

Gerein Nathan J, Haber Joel A

机构信息

Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada, T6G 2G2.

出版信息

J Phys Chem B. 2005 Sep 22;109(37):17372-85. doi: 10.1021/jp051320d.

Abstract

The effect of several deposition parameters on the uniformity of copper electrodeposition through the alumina barrier layer into porous aluminum oxide templates grown in sulfuric or oxalic acid was systematically investigated. A fractional factorial design of experiment was conducted to find suitable deposition conditions among the variables: frequency, voltage, pulsed or continuous deposition, electrolyte concentration, and barrier layer thinning voltage. Continuous ac sine wave deposition conditions yielded excellent uniformity of pore-filling but damaged the porous aluminum oxide templates when deposition was continued to grow bulk copper on the surface. Pulsed electrodeposition yielded comparable uniformity of pore-filling and no damage to the porous aluminum oxide templates, even when bulk copper was deposited on them. Further optimization of pulsed deposition conditions was accomplished by comparing square and sine waveforms and pulse polarity. Pulsed square waveforms produced better pore-filling than pulsed sine waveforms. For sine wave depositions, the oxidative/reductive pulse polarity was more efficient than the commonly used reductive/oxidative pulse polarity. For square wave depositions into sulfuric acid grown pores, the reductive/oxidative pulse polarity produces more uniform pore-filling, likely as a result of enhanced resonant tunneling through the barrier layer and reoxidation of copper in faster filling pores.

摘要

系统研究了几种沉积参数对铜通过氧化铝阻挡层电沉积到在硫酸或草酸中生长的多孔氧化铝模板中的均匀性的影响。进行了析因实验设计,以在以下变量中找到合适的沉积条件:频率、电压、脉冲或连续沉积、电解质浓度和阻挡层减薄电压。连续交流正弦波沉积条件产生了优异的孔填充均匀性,但当继续沉积以在表面生长块状铜时,会损坏多孔氧化铝模板。脉冲电沉积产生了相当的孔填充均匀性,并且即使在多孔氧化铝模板上沉积块状铜时也不会对其造成损坏。通过比较方波和正弦波形以及脉冲极性,进一步优化了脉冲沉积条件。脉冲方波比脉冲正弦波产生更好的孔填充效果。对于正弦波沉积,氧化/还原脉冲极性比常用的还原/氧化脉冲极性更有效。对于沉积到硫酸生长的孔中的方波,还原/氧化脉冲极性产生更均匀的孔填充,这可能是由于通过阻挡层的共振隧穿增强以及在填充速度更快的孔中铜的再氧化。

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