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二氧化硅表面羟基自由基生成机制:分子轨道计算

Mechanism of hydroxyl radical generation from a silica surface: molecular orbital calculations.

作者信息

Narayanasamy Jayakumar, Kubicki James D

机构信息

Department of Geosciences and the Earth and Environmental Systems Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.

出版信息

J Phys Chem B. 2005 Nov 24;109(46):21796-807. doi: 10.1021/jp0543025.

Abstract

The interaction of an H(2)O molecule with cluster models of fractured silica surfaces was studied by means of quantum mechanical calculations. Two clusters representing homolytic cleavage (triple bond Si() and triple bond SiO()) and two representing heterolytic cleavage (triple bond Si(+) and triple bond Si-O(-)) of silica surfaces were modeled. Vibrational frequencies of the reactants and products of these silica surfaces reacting with H(2)O have been calculated and compare favorably with experiment. Comparisons of the Gibbs free and potential energies for the model ionic and radical states were made, and the radical pair of sites was predicted to be more stable by approximately -70 to -85 kJ/mol, depending on the computational methodology. These calculations suggest that when silica is fractured in a vacuum homolytic cleavage is favored. Reaction pathways were investigated for these four model surface sites interacting with H(2)O. The reaction of H(2)O with triple bond SiO() was predicted to generate OH(). Rate constants for these reactions were also calculated and predict a rapid equibrium for the reaction triple bond SiO() + H(2)O --> triple bond SiOH + OH(). Stability of a finite number of triple bond SiO() sites at equilibrium in the above reaction with H(2)O was also predicted, which implies a long-term ability of silica surfaces to produce OH() radicals if the sites of the broken bonds do not repolymerize to form siloxane groups.

摘要

通过量子力学计算研究了H₂O分子与破裂二氧化硅表面的簇模型之间的相互作用。构建了两个代表二氧化硅表面均裂(三键Si()和三键SiO())的簇模型以及两个代表异裂(三键Si(+)和三键Si - O(-))的簇模型。计算了这些二氧化硅表面与H₂O反应的反应物和产物的振动频率,计算结果与实验结果吻合良好。对模型离子态和自由基态的吉布斯自由能和势能进行了比较,根据计算方法的不同,预测自由基对位点的稳定性要高约 - 70至 - 85 kJ/mol。这些计算表明,当二氧化硅在真空中破裂时,均裂更有利。研究了这四个与H₂O相互作用的模型表面位点的反应途径。预测H₂O与三键SiO()的反应会生成OH()。还计算了这些反应的速率常数,并预测三键SiO() + H₂O --> 三键SiOH + OH()反应能快速达到平衡。还预测了在上述与H₂O的反应中,有限数量的三键SiO()位点在平衡时的稳定性,这意味着如果断键位点不重新聚合形成硅氧烷基团,二氧化硅表面具有长期产生OH()自由基的能力。

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