Si(x)Ge(1-x)衬底上锥形和棒状硅纳米线的合成与表征

Synthesis and characterization of taper- and rodlike si nanowires on Si(x)Ge(1-x) substrate.

作者信息

Chueh Y L, Chou L J, Hsu C M, Kung S C

机构信息

Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan, Republic of China.

出版信息

J Phys Chem B. 2005 Nov 24;109(46):21831-5. doi: 10.1021/jp046945a.

DOI:10.1021/jp046945a

PMID:16853835

Abstract

Taper- and rodlike Si nanowires (SiNWs) are synthesized successfully on Si and Si(0.8)Ge(0.2) substrates. The growth mechanisms of taper- and rodlike SiNWs are proposed to be oxide-assisted growth (OAG) and vapor-liquid-solid (VLS) growth, respectively. For taperlike SiNWs annealed at 1200 degrees C for 3 h, the emission peaks are found at 772, 478, and 413 nm. On the other hand, for rodlike SiNWs annealed at 1200 degrees C for 4 h, emission peaks are found at 783, 516, and 413 nm. From the field-emission measurements, the taperlike Si nanowires exhibit superior field-emission behavior with a turn-on field of 6.3-7.3 V/mum. The field enhancement, beta, has been estimated to be 700 and 1000 at low and high fields, respectively. The excellent field-emission characteristics are attributed to the perfect crystalline structure and the taperlike geometry of the Si nanowires.

摘要

在硅和硅（0.8）锗（0.2）衬底上成功合成了锥形和棒状硅纳米线（SiNWs）。锥形和棒状硅纳米线的生长机制分别被认为是氧化物辅助生长（OAG）和气-液-固（VLS）生长。对于在1200℃下退火3小时的锥形硅纳米线，在772、478和413nm处发现发射峰。另一方面，对于在1200℃下退火4小时的棒状硅纳米线，在783、516和413nm处发现发射峰。从场发射测量结果来看，锥形硅纳米线表现出优异的场发射行为，开启场为6.3 - 7.3V/μm。场增强因子β在低场和高场下分别估计为700和1000。优异的场发射特性归因于硅纳米线完美的晶体结构和锥形几何形状。