Li Wei-Na, Ding Yun-Shuang, Yuan Jikang, Gomez Sinue, Suib Steven L, Galasso Francis S, Dicarlo Joe F
Institute of Materials Science, U-3136, University of Connecticut, Storrs, Connecticut 06269, USA.
J Phys Chem B. 2005 Mar 3;109(8):3291-7. doi: 10.1021/jp0449298.
Silicon nanowires (SiNWs) have been fabricated by chemical vapor deposition at ambient pressure using SiCl(4) as a silicon source and mesophase carbon microbead powder as a substrate without any templates and/or metal catalysts. The SiNWs have a crystalline core with a very thin amorphous SiO(x) sheath. The obtained SiNWs are homogeneous with average diameters below 50 nm and lengths up to micrometers. Temperature and time effects on the growth of SiNWs were systematically studied. Higher reaction temperatures and longer reaction times resulted in larger diameters and higher yields of SiNWs. SiNWs with a better crystallinity can be obtained at higher temperatures and longer reaction times. The obtained SiNWs were characterized by field-emission scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and transmission electron microscopy.
通过常压化学气相沉积法，以SiCl₄作为硅源、中间相碳微珠粉末作为基底，在无任何模板和/或金属催化剂的情况下制备了硅纳米线（SiNWs）。这些SiNWs具有一个带有非常薄的非晶SiOₓ鞘层的晶体核心。所获得的SiNWs均匀一致，平均直径低于50纳米，长度可达微米级。系统地研究了温度和时间对SiNWs生长的影响。较高的反应温度和较长的反应时间导致SiNWs的直径更大、产率更高。在较高温度和较长反应时间下可以获得结晶度更好的SiNWs。通过场发射扫描电子显微镜、X射线衍射、拉曼光谱和透射电子显微镜对所获得的SiNWs进行了表征。
