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单壁碳纳米管化学传感器中缺陷的作用。

Role of defects in single-walled carbon nanotube chemical sensors.

作者信息

Robinson Joshua A, Snow Eric S, Badescu Stefan C, Reinecke Thomas L, Perkins F Keith

机构信息

The Naval Research Laboratory, Electronic Science and Technology Division, 4555 Overlook Avenue, Washington, DC 20375, USA.

出版信息

Nano Lett. 2006 Aug;6(8):1747-51. doi: 10.1021/nl0612289.

Abstract

We explore the electronic response of single-walled carbon nanotubes (SWNT) to trace levels of chemical vapors. We find adsorption at defect sites produces a large electronic response that dominates the SWNT capacitance and conductance sensitivity. This large response results from increased adsorbate binding energy and charge transfer at defect sites. Finally, we demonstrate controlled introduction of oxidation defects can be used to enhance sensitivity of a SWNT network sensor to a variety of chemical vapors.

摘要

我们研究了单壁碳纳米管(SWNT)对痕量化学蒸汽的电子响应。我们发现缺陷位点处的吸附会产生较大的电子响应,该响应主导了SWNT的电容和电导灵敏度。这种大响应源于吸附质结合能的增加以及缺陷位点处的电荷转移。最后,我们证明了可控引入氧化缺陷可用于增强SWNT网络传感器对多种化学蒸汽的灵敏度。

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