Männik Jaan, Heller Iddo, Janssens Anne M, Lemay Serge G, Dekker Cees
Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
Nano Lett. 2008 Feb;8(2):685-8. doi: 10.1021/nl073271h. Epub 2008 Jan 25.
The noise properties of single-walled carbon nanotube transistors (SWNT-FETs) are essential for the performance of electronic circuits and sensors. Here, we investigate the mechanism responsible for the low-frequency noise in liquid-gated SWNT-FETs and its scaling with the length of the nanotube channel down to the nanometer scale. We show that the gate dependence of the noise amplitude provides strong evidence for a recently proposed charge-noise model. We find that the power of the charge noise scales as the inverse of the channel length of the SWNT-FET. Our measurements also show that surprisingly the ionic strength of the surrounding electrolyte has a minimal effect on the noise magnitude in SWNT-FETs.
单壁碳纳米管晶体管（SWNT - FET）的噪声特性对于电子电路和传感器的性能至关重要。在此，我们研究了液栅SWNT - FET中低频噪声产生的机制及其随纳米管沟道长度缩小至纳米尺度的变化规律。我们表明，噪声幅度的栅极依赖性为最近提出的电荷噪声模型提供了有力证据。我们发现电荷噪声的功率与SWNT - FET沟道长度的倒数成比例。我们的测量还表明，令人惊讶的是，周围电解质的离子强度对SWNT - FET中的噪声幅度影响极小。
