Blaustein R O, Lea E J, Finkelstein A
Department of Physiology & Biophysics, Albert Einstein College of Medicine, Bronx, New York 10461.
J Gen Physiol. 1990 Nov;96(5):921-42. doi: 10.1085/jgp.96.5.921.
Previous studies have shown that symmetric tetraalkylammonium ions affect, in a voltage-dependent manner, the conductance of membranes containing many channels formed by the PA65 fragment of anthrax toxin. In this paper we analyze this phenomenon at the single-channel level for tetrabutylammonium ion (Bu4N+). We find that Bu4N+ induces a flickery block of the PA65 channel when present on either side of the membrane, and this block is relieved by large positive voltages on the blocking-ion side. At high frequencies (greater than 2 kHz) we have resolved individual blocking events and measured the dwell times in the blocked and unblocked states. These dwell times have single-exponential distributions, with time constants tau b and tau u that are voltage dependent, consistent with the two-barrier, single-well potential energy diagram that we postulated in our previous paper. The fraction of time the channel spends unblocked [tau u/(tau u + tau b)] as a function of voltage is identical to the normalized conductance-voltage relation determined from macroscopic measurements of blocking, thus demonstrating that these single channels mirror the behavior seen with many (greater than 10,000) channels in the membrane. In going from large negative to large positive voltages (-100 to +160 mV) on the cis (PA65-containing) side of the membrane, one sees the mean blocked time (tau b) increase to a maximum at +60 mV and then steadily decline for voltages greater than +60 mV, thereby clearly demonstrating that Bu4N+ is driven through the channel by positive voltages on the blocking-ion side. In other words, the channel is permeable to Bu4N+. An interesting finding that emerges from analysis of the voltage dependence of mean blocked and unblocked times is that the blocking rate, with Bu4N+ present on the cis side of the membrane, plateaus at large positive cis voltages to a voltage-independent value consistent with the rate of Bu4N+ entry into the blocking site being diffusion limited.
先前的研究表明,对称四烷基铵离子以电压依赖的方式影响含有许多由炭疽毒素PA65片段形成的通道的膜的电导。在本文中,我们在单通道水平上分析了四丁基铵离子(Bu4N+)的这种现象。我们发现,当Bu4N+存在于膜的任一侧时,它会诱导PA65通道的闪烁阻断,并且这种阻断会被阻断离子侧的大正电压解除。在高频(大于2 kHz)时,我们解析了单个阻断事件,并测量了阻断态和非阻断态的停留时间。这些停留时间具有单指数分布,时间常数τb和τu与电压有关,这与我们先前论文中假设的双势垒、单阱势能图一致。通道处于非阻断状态的时间分数[τu/(τu + τb)]作为电压的函数,与从宏观阻断测量确定的归一化电导-电压关系相同,从而表明这些单通道反映了膜中许多(大于10,000个)通道的行为。在膜的顺式(含PA65)侧从大的负电压变为大的正电压(-100至+160 mV)时,可以看到平均阻断时间(τb)在+60 mV时增加到最大值,然后对于大于+60 mV的电压稳步下降,从而清楚地表明Bu4N+被阻断离子侧的正电压驱动通过通道。换句话说,通道对Bu4N+是可渗透的。对平均阻断时间和非阻断时间的电压依赖性分析得出的一个有趣发现是,当Bu4N+存在于膜的顺式侧时,阻断速率在大的正顺式电压下达到平稳,达到与Bu4N+进入阻断位点的速率受扩散限制一致的电压无关值。