Neumann W, Kirmse H, Häusler I, Otto R
Institute of Physics, Humboldt University of Berlin, Berlin, Germany.
J Microsc. 2006 Sep;223(Pt 3):200-4. doi: 10.1111/j.1365-2818.2006.01619.x.
Peak-finding procedures and the geometric phase method of quantitative high resolution electron microscopy (qHRTEM) were applied to determine the local strain and the chemical composition of nanostructured semiconductor materials. The growth of the structures investigated was induced by minimization of strain energy. The analysis of strain distribution is necessary for the understanding of the self-organized formation of nanostructures. The possibilities and limitations of the methods are discussed in detail by analysing HRTEM images of (Si,Ge) islands and of a double layer of stacked quantum dots of (In,Ga)As and Ga(Sb,As).
采用峰值查找程序和定量高分辨率电子显微镜（qHRTEM）的几何相位法来确定纳米结构半导体材料的局部应变和化学成分。所研究结构的生长是通过使应变能最小化来诱导的。应变分布分析对于理解纳米结构的自组织形成是必要的。通过分析（Si，Ge）岛以及（In，Ga）As和Ga（Sb，As）堆叠量子点双层的高分辨率透射电子显微镜（HRTEM）图像，详细讨论了这些方法的可能性和局限性。
