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偏振选择性等离子体增强硅量子点发光

Polarization-selective plasmon-enhanced silicon quantum-dot luminescence.

作者信息

Mertens Hans, Biteen Julie S, Atwater Harry A, Polman Albert

机构信息

Center for Nanophotonics, FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands.

出版信息

Nano Lett. 2006 Nov;6(11):2622-5. doi: 10.1021/nl061494m.

Abstract

The photoluminescence intensity of silicon quantum dots is enhanced in a polarization-selective way by coupling to elongated Ag nanoparticles. The observed polarization dependence provides direct proof that the PL enhancement is due to electromagnetic coupling of the silicon quantum-dot emission dipoles with dipolar plasmon modes of the Ag nanoparticles. The polarization selectivity demonstrates the potential of engineered plasmonic nanostructures to optimize and tune the performance of light sources in a way that goes beyond solely enhancing the emission and absorption rates.

摘要

通过与细长的银纳米颗粒耦合,硅量子点的光致发光强度以偏振选择的方式得到增强。观察到的偏振依赖性提供了直接证据,证明光致发光增强是由于硅量子点发射偶极子与银纳米颗粒的偶极等离子体模式之间的电磁耦合。偏振选择性表明,工程化等离子体纳米结构有潜力以一种不仅仅是提高发射和吸收率的方式来优化和调节光源的性能。

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