Yantchev V, Enlund J, Biurström J, Katardjiev I
Department Solid State Electronics, Angstrom Lab, Uppsala University, Uppsala, Sweden.
Ultrasonics. 2006 Dec;45(1-4):208-12. doi: 10.1016/j.ultras.2006.09.008. Epub 2006 Nov 2.
Highly c-oriented aluminum nitride (AlN) thin piezoelectric films have been grown by pulsed direct-current (DC) magnetron reactive sputter deposition. The films were deposited at room temperature and had a typical full width half maximum (FWHM) value of the (0 0 2) rocking curve of around 2 degrees. Resonant devices in thin film plates having surface acoustic wave (SAW) based designs were fabricated by means of low resolution photolithography. The devices were designed to operate with the fast Rayleigh and Lamb modes respectively. Both types of devices exhibited propagation velocities in excess of 10,000 m/s and sufficient electromechanical couplings. The device measurements illustrate the big potential of these modes for the development of low cost IC compatible electroacoustic devices in the lower GHz range. The basic properties of the modes studied are discussed in a comparative manner. Potential commercial applications are also outlined.
通过脉冲直流磁控反应溅射沉积法生长了高度c取向的氮化铝（AlN）薄膜压电薄膜。这些薄膜在室温下沉积，（0 0 2）摇摆曲线的典型半高宽（FWHM）值约为2度。通过低分辨率光刻技术制造了基于表面声波（SAW）设计的薄膜板中的谐振器件。这些器件分别设计为以快速瑞利模式和兰姆模式运行。两种类型的器件都表现出超过10000 m/s的传播速度和足够的机电耦合。器件测量结果表明，这些模式在开发较低GHz范围内低成本的与集成电路兼容的电声器件方面具有巨大潜力。以比较的方式讨论了所研究模式的基本特性。还概述了潜在的商业应用。
