Nonradical mechanisms for the uncatalyzed thermal functionalization of silicon surfaces by alkenes and alkynes: a density functional study.

We propose a new concerted mechanism for the uncatalyzed hydrosilylation of terminal alkenes and alkynes, alternative to the conventional radical-based mechanism. Density functional calculations have been carried out on these and on previously proposed alternative mechanisms for the hydrosilylation of ethylene and acetylene by suitable finite size clusters as models of the thermal functionalization of -SiH3, =SiH2, and [triple bound] SiH groups in flat Si(100) and Si(111) and porous silicon surfaces by alkenes and alkynes. For each step involved in the considered hydrosilylation pathways, we optimized the geometries of reactants and products and located the corresponding transition states. The calculated activation energies for the concerted pathways of ethylene and acetylene are, respectively, 57.6 and 60.9 kcal mol(-1) on -SiH3 and in the ranges 62-63 and 58-61 kcal mol-1 on =SiH2 and 64-66 and 56-61 kcal mol(-1) on SiH. These values are much lower than the activation energies calculated for the corresponding homolytic dissociation of the Si-H bond, which is the preliminary step in the radical path, 85.6, 82-83, and 79-81 kcal mol(-1), respectively, for -SiH3, =SiH2, and [triple bound] SiH groups. Our results thus suggest that the thermal hydrosilylation of alkenes and alkynes on silicon surfaces, for which a radical-based mechanism is currently accepted, may occur through a concerted mechanism.