径迹模板中正交晶系二氧化锡纳米线的合成

Synthesis of Orthorhombic Tin Dioxide Nanowires in Track Templates.

作者信息

Baimukhanov Zein, Dauletbekova Alma, Junisbekova Diana, Kalytka Valeriy, Akilbekov Abdirash, Akylbekova Aiman, Baubekova Guldar, Aralbayeva Gulnara, Bazarbek Assyl-Dastan, Usseinov Abay, Popov Anatoli I

机构信息

Department of Technical Physics, L.N. Gumilyov Eurasian National University, Satpayev Str. 2, Astana 010008, Kazakhstan.

Faculty of Energy, Automation and Telecommunications, Abylkas Saginov Karaganda Technical University, Karaganda 100027, Kazakhstan.

出版信息

Materials (Basel). 2024 Mar 7;17(6):1226. doi: 10.3390/ma17061226.

DOI:10.3390/ma17061226

PMID:38541381

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10972268/

Abstract

Electrochemical deposition into a prepared SiO/Si-p ion track template was used to make orthorhombic SnO vertical nanowires (NWs) for this study. As a result, a SnO-NWs/SiO/Si nanoheterostructure with an orthorhombic crystal structure of SnO nanowires was obtained. Photoluminescence excited by light with a wavelength of 240 nm has a low intensity, arising mainly due to defects such as oxygen vacancies and interstitial tin or tin with damaged bonds. The current-voltage characteristic measurement showed that the SnO-NWs/SiO/Si nanoheterostructure made this way has many p-n junctions.

摘要

本研究采用电化学沉积法，将其沉积到制备好的SiO/Si-p离子径迹模板中，以制备正交晶系的SnO垂直纳米线（NWs）。结果，获得了具有SnO纳米线正交晶体结构的SnO-NWs/SiO/Si纳米异质结构。由波长为240nm的光激发的光致发光强度较低，这主要是由于诸如氧空位、间隙锡或键受损的锡等缺陷所致。电流-电压特性测量表明，通过这种方式制备的SnO-NWs/SiO/Si纳米异质结构有许多p-n结。