Maehashi Kenzo, Katsura Taiji, Kerman Kagan, Takamura Yuzuru, Matsumoto Kazuhiko, Tamiya Eiichi
Anal Chem. 2007 Jan 15;79(2):782-7. doi: 10.1021/ac060830g.
We have fabricated label-free protein biosensors based on aptamer-modified carbon nanotube field-effect transistors (CNT-FETs) for the detection of immunoglobulin E (IgE). After the covalent immobilization of 5'-amino-modified 45-mer aptamers on the CNT channels, the electrical properties of the CNT-FETs were monitored in real time. The introduction of target IgE at various concentrations caused a sharp decrease in the source-drain current, and a gradual saturation was observed at lower concentrations. The amount of the net source-drain current before and after IgE introduction on the aptamer-modified CNT-FETs increased as a function of IgE concentration. The detection limit for IgE was determined as 250 pM. We have also prepared CNT-FET biosensors using a monoclonal antibody against IgE (IgE-mAb). The electrical properties of the aptamer- and antibody-modified CNT-FETs were compared. The performance of aptamer-modified CNT-FETs provided better results than the ones obtained using IgE-mAb-modified CNT-FETs under similar conditions. Thus, we suggest that the aptamer-modified CNT-FETs are promising candidates for the development of label-free protein biosensors.
我们基于适体修饰的碳纳米管场效应晶体管(CNT-FET)制备了无标记蛋白质生物传感器,用于检测免疫球蛋白E(IgE)。在将5'-氨基修饰的45聚体适体共价固定在碳纳米管通道上后,实时监测CNT-FET的电学性质。引入不同浓度的目标IgE会导致源漏电流急剧下降,并且在较低浓度下观察到逐渐饱和。在适体修饰的CNT-FET上引入IgE前后的净源漏电流大小随IgE浓度的变化而增加。IgE的检测限确定为250 pM。我们还使用抗IgE单克隆抗体(IgE-mAb)制备了CNT-FET生物传感器。比较了适体和抗体修饰的CNT-FET的电学性质。在相似条件下,适体修饰的CNT-FET的性能比使用IgE-mAb修饰的CNT-FET得到的结果更好。因此,我们认为适体修饰的CNT-FET是开发无标记蛋白质生物传感器的有前途的候选者。