Kwon Sangjin, Jeong Youngmo, Jeong Sungho
Department of Mechatronics, Gwangju Institute of Science and Technology, 1 Oryong-dong Buk-gu, Gwangju 500-712, Republic of Korea.
J Nanosci Nanotechnol. 2006 Nov;6(11):3647-51. doi: 10.1166/jnn.2006.074.
The uniformity and reproducibility of the photoresist nanopatterns fabricated using near-field scanning optical nanolithography (NSOL) are investigated. The nanopatterns could be used as nanomasks for pattern transfer on a silicon wafer. In the NSOL process, uniform patterning with high reproducibility is essential for reliable transfer of the mask patterns on a silicon substrate. Using an aperture type cantilever nanoprobe operated at contact mode and a positive photoresist, various nanopatterns are produced on thin photoresist layer coated on the silicon substrate. The size and shape variations of thereby produced patterns are investigated using atomic force microscope to determine their uniformity and reproducibility. It is demonstrated that the NSOL-produced photo-resist nanomasks can be successfully applied for silicon pattern transfer by fabricating a silicon nanochannel array.
研究了使用近场扫描光学纳米光刻（NSOL）制造的光刻胶纳米图案的均匀性和可重复性。这些纳米图案可用作在硅片上进行图案转移的纳米掩膜。在NSOL工艺中，具有高可重复性的均匀图案化对于在硅衬底上可靠地转移掩膜图案至关重要。使用在接触模式下操作的孔径型悬臂纳米探针和正性光刻胶，在涂覆于硅衬底上的薄光刻胶层上产生了各种纳米图案。使用原子力显微镜研究由此产生的图案的尺寸和形状变化，以确定其均匀性和可重复性。结果表明，通过制造硅纳米通道阵列，NSOL制备的光刻胶纳米掩膜可成功应用于硅图案转移。
