Masek J, Kudrnovský J, Máca F, Gallagher B L, Campion R P, Gregory D H, Jungwirth T
Institute of Physics ASCR, Na Slovance 2, 182 21 Praha 8, Czech Republic.
Phys Rev Lett. 2007 Feb 9;98(6):067202. doi: 10.1103/PhysRevLett.98.067202. Epub 2007 Feb 7.
We propose to replace Ga in (Ga,Mn)As with Li and Zn as a route to high Curie temperature, carrier mediated ferromagnetism in a dilute moment n-type semiconductor. Superior material characteristics, rendering Li(Zn,Mn)As a realistic candidate for such a system, include high solubility of the isovalent substitutional Mn impurity and carrier concentration controlled independently of Mn doping by adjusting Li-(Zn,Mn) stoichiometry. Our predictions are anchored by ab initio calculations and comparisons with the familiar and directly related (Ga,Mn)As, by the physical picture we provide for the exchange interaction between Mn local moments and electrons in the conduction band, and by analysis of prospects for the controlled growth of Li(Zn,Mn)As materials.
我们提议用锂和锌取代（镓，锰）砷中的镓，以此作为在稀磁矩n型半导体中实现高居里温度、载流子介导铁磁性的途径。锂（锌，锰）砷具有卓越的材料特性，使其成为该体系的一个现实候选材料，这些特性包括等价位替锰杂质的高溶解度，以及通过调整锂 -（锌，锰）化学计量比可独立于锰掺杂来控制载流子浓度。我们的预测基于从头算计算以及与熟知且直接相关的（镓，锰）砷的比较，基于我们为锰局域磁矩与导带电子之间的交换相互作用所提供的物理图像，还基于对锂（锌，锰）砷材料可控生长前景的分析。
