新型氟化物-砷化物稀磁半导体（Ba，K）F（Zn，Mn）As：具有独立的自旋和电荷掺杂

New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping.

作者信息

Chen Bijuan, Deng Zheng, Li Wenmin, Gao Moran, Liu Qingqing, Gu C Z, Hu F X, Shen B G, Frandsen Benjamin, Cheung Sky, Lian Liu, Uemura Yasutomo J, Ding Cui, Guo Shengli, Ning Fanlong, Munsie Timothy J S, Wilson Murray Neff, Cai Yipeng, Luke Graeme, Guguchia Zurab, Yonezawa Shingo, Li Zhi, Jin Changqing

机构信息

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

Department of Physics, Columbia University, New York, New York 10027, USA.

出版信息

Sci Rep. 2016 Nov 22;6:36578. doi: 10.1038/srep36578.

DOI:10.1038/srep36578

PMID:27874044

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5118802/

Abstract

We report the discovery of a new fluoride-arsenide bulk diluted magnetic semiconductor (Ba,K)F(Zn,Mn)As with the tetragonal ZrCuSiAs-type structure which is identical to that of the "1111" iron-based superconductors. The joint hole doping via (Ba,K) substitution &spin doping via (Zn,Mn) substitution results in ferromagnetic order with Curie temperature up to 30 K and demonstrates that the ferromagnetic interactions between the localized spins are mediated by the carriers. Muon spin relaxation measurements confirm the intrinsic nature of the long range magnetic order in the entire volume in the ferromagnetic phase. This is the first time that a diluted magnetic semiconductor with decoupled spin and charge doping is achieved in a fluoride compound. Comparing to the isostructure oxide counterpart of LaOZnSb, the fluoride DMS (Ba,K)F(Zn,Mn)As shows much improved semiconductive behavior that would be benefit for further application developments.

摘要

我们报道了一种新型氟化物 - 砷化物体相稀磁半导体（Ba，K）F（Zn，Mn）As的发现，其具有四方ZrCuSiAs型结构，与“1111”型铁基超导体的结构相同。通过（Ba，K）替代进行的联合空穴掺杂以及通过（Zn，Mn）替代进行的自旋掺杂导致居里温度高达30 K的铁磁序，并表明局域自旋之间的铁磁相互作用由载流子介导。μ子自旋弛豫测量证实了铁磁相中整个体积内长程磁序的本征性质。这是首次在氟化物化合物中实现自旋和电荷掺杂解耦的稀磁半导体。与同结构的氧化物对应物LaOZnSb相比，氟化物稀磁半导体（Ba，K）F（Zn，Mn）As表现出大大改善的半导体行为，这将有利于进一步的应用开发。