使用镀铂铱碳纳米管尖端进行四点探针电阻测量。

Four-point probe resistance measurements using PtIr-coated carbon nanotube tips.

作者信息

Yoshimoto Shinya, Murata Yuya, Kubo Keisuke, Tomita Kazuhiro, Motoyoshi Kenji, Kimura Takehiko, Okino Hiroyuki, Hobara Rei, Matsuda Iwao, Honda Shin-Ichi, Katayama Mitsuhiro, Hasegawa Shuji

机构信息

Department of Physics, School of Science, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan.

出版信息

Nano Lett. 2007 Apr;7(4):956-9. doi: 10.1021/nl0630182. Epub 2007 Mar 27.

DOI:10.1021/nl0630182

PMID:17385933

Abstract

We performed four-terminal conductivity measurements on a CoSi2 nanowire (NW) at room temperature by using PtIr-coated carbon nanotube (CNT) tips in a four-tip scanning tunneling microscope. The physical stability and high aspect ratio of the CNT tips made it possible to reduce the probe spacing down to ca. 30 nm. The probe-spacing dependence of resistance showed diffusive transport even at 30 nm and no current leakage to the Si substrate.

摘要

我们使用四探针扫描隧道显微镜中涂有铂铱的碳纳米管（CNT）尖端，在室温下对一根CoSi2纳米线（NW）进行了四端电导率测量。碳纳米管尖端的物理稳定性和高纵横比使得将探针间距减小到约30纳米成为可能。电阻对探针间距的依赖性表明，即使在30纳米时也存在扩散输运，并且没有电流泄漏到硅衬底。