Zheng Yuankai, Wu Yihong, Lil Kebin, Qiu Jinjun, Han Guchang, Guo Zaibing, Luo Ping, An Lihua, Liu Zhiyong, Wang Li, Tan Seng Ghee, Zong Baoyu, Liu Bo
Data Storage Institute, 5 Engineering Drive 1, Republic of Singapore, 117608.
J Nanosci Nanotechnol. 2007 Jan;7(1):117-37.
The high density and high speed nonvolatile MTJ MRAMs are reviewed from perspective of the reading and writing operation. The reading operation of the MRAM with different sensing schemes and cell array structures is discussed, in particular the reference resistance generating schemes which are introduced to maximize the cell efficiency and reading reliability. The high density, low cost cross-point cell layout structures are analyzed systematically. The writing operation modes ranging from the half-select, toggle mode, guided SAF direct writing, thermally assisted writing, to the spin transfer switching are investigated both theoretically and experimentally. The thermal factor always plays an important role in determine not only the thermal stability but also the reading and writing reliability.
从读写操作的角度对高密度、高速非易失性磁隧道结（MTJ）磁随机存取存储器（MRAM）进行了综述。讨论了具有不同传感方案和单元阵列结构的MRAM的读取操作，特别是为了最大化单元效率和读取可靠性而引入的参考电阻生成方案。系统地分析了高密度、低成本的交叉点单元布局结构。从理论和实验两方面研究了从半选、触发模式、引导式自旋阀直接写入、热辅助写入到自旋转移切换等写入操作模式。热因素不仅在决定热稳定性方面，而且在决定读写可靠性方面始终起着重要作用。
