Lee Woo, Han Hee, Lotnyk Andriy, Schubert Markus Andreas, Senz Stephan, Alexe Marin, Hesse Dietrich, Baik Sunggi, Gösele Ulrich
Nat Nanotechnol. 2008 Jul;3(7):402-7. doi: 10.1038/nnano.2008.161. Epub 2008 Jun 15.
Ferroelectric materials have emerged in recent years as an alternative to magnetic and dielectric materials for nonvolatile data-storage applications. Lithography is widely used to reduce the size of data-storage elements in ultrahigh-density memory devices. However, ferroelectric materials tend to be oxides with complex structures that are easily damaged by existing lithographic techniques, so an alternative approach is needed to fabricate ultrahigh-density ferroelectric memories. Here we report a high-temperature deposition process that can fabricate arrays of individually addressable metal/ferroelectric/metal nanocapacitors with a density of 176 Gb inch(-2). The use of an ultrathin anodic alumina membrane as a lift-off mask makes it possible to deposit the memory elements at temperatures as high as 650 degrees C, which results in excellent ferroelectric properties.
近年来，铁电材料作为磁性和介电材料的替代品，已被用于非易失性数据存储应用。光刻技术被广泛用于减小超高密度存储设备中数据存储元件的尺寸。然而，铁电材料往往是具有复杂结构的氧化物，容易被现有的光刻技术损坏，因此需要一种替代方法来制造超高密度铁电存储器。在此，我们报告了一种高温沉积工艺，该工艺可以制造密度为176 Gb英寸-2的可单独寻址的金属/铁电体/金属纳米电容器阵列。使用超薄阳极氧化铝膜作为剥离掩膜，使得在高达650摄氏度的温度下沉积存储元件成为可能，从而产生优异的铁电性能。
