Qiao L, Zheng W T, Xu H, Zhang L, Jiang Q
Department of Materials Science, Jilin University, Qian Wei Road 2699, Changchun 130012, People's Republic of China.
J Chem Phys. 2007 Apr 28;126(16):164702. doi: 10.1063/1.2722750.
The geometrical structures and field emission properties of pristine and N-doped capped (5,5) single-walled carbon nanotubes have been investigated using first-principles density-functional theory. The structures of N-doped carbon nanotubes are stable under field emission conditions. The calculated work function of N-doped carbon nanotube decreases drastically when compared with pristine carbon nanotube, which means the enhancement of field emission properties. The ionization potentials of N-doped carbon nanotubes are also reduced significantly. The authors analyze the field emission mechanism in terms of energy gap between the lowest unoccupied molecular orbital and the highest occupied molecular orbital, Mulliken charge population, and local density of states. Due to the doping of nitrogen atom, the local density of states at the Fermi level increases dramatically and donor states can be observed above the Fermi level. The authors' results suggest that the field emission properties of carbon nanotubes can be enhanced by the doping of nitrogen atom, which are consistent with the experimental results.
利用第一性原理密度泛函理论研究了原始的和氮掺杂封顶的(5,5)单壁碳纳米管的几何结构和场发射特性。氮掺杂碳纳米管的结构在场发射条件下是稳定的。与原始碳纳米管相比,计算得到的氮掺杂碳纳米管的功函数急剧降低,这意味着场发射特性得到增强。氮掺杂碳纳米管的电离势也显著降低。作者从最低未占据分子轨道与最高占据分子轨道之间的能隙、穆利肯电荷布居和局域态密度方面分析了场发射机理。由于氮原子的掺杂,费米能级处的局域态密度急剧增加,并且在费米能级上方可以观察到施主态。作者的结果表明,氮原子的掺杂可以增强碳纳米管的场发射特性,这与实验结果一致。