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N/B 掺杂对碳纳米管、碳纳米角和石墨烯纳米带的电子和场发射性能的影响。

Effect of N/B doping on the electronic and field emission properties for carbon nanotubes, carbon nanocones, and graphene nanoribbons.

机构信息

Department of Materials Science, Laboratory of Automobile Materials, MOE, Jilin University, QianWei Road 2699, Changchun, 130012, P. R. China.

出版信息

Nanoscale. 2010 Jul;2(7):1069-82. doi: 10.1039/c0nr00002g. Epub 2010 May 11.

Abstract

Carbon nanotubes, carbon nanocones, and graphene nanoribbons are carbon-based nanomaterials, and their electronic and field emission properties can be altered by either electron donors or electron acceptors. Among both donors and accepters, nitrogen and boron atoms are typical substitutional dopants for carbon materials. The contribution of this paper mainly provides a comprehensive overview of the theoretical topics. The effect of nitrogen/boron doping on the electronic and field emission properties for carbon nanotubes, carbon nanocones, and graphene nanoribbons is reviewed. It is also suggested that nitrogen is more an n-type donor. The discussion about the mechanism of field emission for N-doped carbon nanotubes and electronic structures of N-doped graphene nanoribbons is interesting and timely.

摘要

碳纳米管、碳纳米角和石墨烯纳米带是碳基纳米材料,其电子和场发射性能可以通过电子供体或电子受体来改变。在供体和受体中,氮和硼原子是碳材料的典型取代掺杂剂。本文的主要贡献是提供一个综合的理论主题概述。综述了氮/硼掺杂对碳纳米管、碳纳米角和石墨烯纳米带的电子和场发射性能的影响。此外,还表明氮是一种 n 型供体。关于氮掺杂碳纳米管的场发射机制和氮掺杂石墨烯纳米带的电子结构的讨论是有趣和及时的。

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