Wang Yue, Zhu Kaigui, Shao Qingyi
Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Out Ring Road No. 378 Guangzhou University Town, Guangzhou, 510006, China.
School of Science, Jiangnan University, Wuxi, Jiangsu, 214122, China.
Sci Rep. 2017 Oct 10;7(1):12894. doi: 10.1038/s41598-017-13286-3.
Continuous miniaturization with improved performance has enabled the development of electronic devices. However, further shrinking of electronic circuits will push feature sizes (linewidths) firmly into the nanoscale. This can cause electronic devices built using current materials (silicon-based) and fabrication processes to not work as expected. Therefore, new materials or preparation technologies are needed for the further miniaturization of electron devices. Here, through theoretical simulation, we show that regular doping of a Cu-atom chain on a single-wall carbon nanotube (SWCNT) can be used to realize an atomic-scale current channel (Cu-atom-chain current channel) with a linewidth of approximately 0.246 nm. Moreover, the atomic-scale Cu-atom-chain current channel shows enhanced conductivity (lower power consumption) compared to a pristine SWCNT. Such a Cu-atom-chain current channel with an atomic-scale linewidth and its method of fabrication (regular doping) may be suitable for the preparation of nanoelectronic devices.
性能提升的持续小型化推动了电子设备的发展。然而，电子电路的进一步缩小将使特征尺寸（线宽）稳固地进入纳米尺度。这可能导致使用当前材料（硅基）和制造工艺构建的电子设备无法按预期工作。因此，电子设备的进一步小型化需要新材料或制备技术。在此，通过理论模拟，我们表明在单壁碳纳米管（SWCNT）上对铜原子链进行规则掺杂可用于实现线宽约为0.246 nm的原子尺度电流通道（铜原子链电流通道）。此外，与原始单壁碳纳米管相比，原子尺度的铜原子链电流通道显示出增强的导电性（更低的功耗）。这种具有原子尺度线宽的铜原子链电流通道及其制造方法（规则掺杂）可能适用于纳米电子器件的制备。
