Chui B W, Aeschimann L, Akiyama T, Staufer U, de Rooij N F, Lee J, Goericke F, King W P, Vettiger P
Institute of Microtechnology, Rue Jaquet-Droz 1, Neuchatel, Switzerland.
Rev Sci Instrum. 2007 Apr;78(4):043706. doi: 10.1063/1.2722386.
We describe a highly effective method of reducing thermal sensitivity in piezoresistive sensors, in particular silicon cantilevers, by taking advantage of the dependence of the piezoresistive coefficient of silicon on crystallographic orientation. Two similar strain-sensing elements are used, positioned at 45 degrees to each other: One is set along a crystalline axis associated with a maximum piezoresistive coefficient to produce the displacement signal, while the other is set along an axis of the vanishing coefficient to produce the reference signal. Unlike other approaches, both sensing elements are coupled to the same cantilever body, maximizing thermal equilibration. Measurements show at least one order of magnitude improvement in thermal disturbance rejection over conventional approaches using uncoupled resistors.
我们描述了一种通过利用硅的压阻系数对晶体取向的依赖性来降低压阻式传感器(特别是硅悬臂梁)热灵敏度的高效方法。使用了两个相似的应变传感元件,它们相互成45度角放置:一个沿着与最大压阻系数相关的晶体轴设置以产生位移信号,而另一个沿着系数为零的轴设置以产生参考信号。与其他方法不同,两个传感元件都耦合到同一个悬臂梁主体上,从而使热平衡最大化。测量结果表明,与使用未耦合电阻器的传统方法相比,热干扰抑制至少提高了一个数量级。