Gracheva Maria E, Vidal Julien, Leburton Jean-Pierre
Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA.
Nano Lett. 2007 Jun;7(6):1717-22. doi: 10.1021/nl0707104. Epub 2007 May 22.
We show that a semiconductor membrane made of two thin layers of opposite (n- and p-) doping can perform electrically tunable ion current rectification and filtering in a nanopore. Our model is based on the solution of the 3D Poisson equation for the electrostatic potential in a double-cone nanopore combined with a transport model. It predicts that, for appropriate biasing of the membrane-electrolyte system, transitions from ohmic behavior to sharp rectification with vanishing leakage current are achievable. Furthermore, ion current rectifying and filtering regimes of the nanopore correspond to different charge states in the p-n membrane, which can be tuned with appropriate biasing of the n- and p- layers.
我们表明，由两层具有相反（n型和p型）掺杂的薄层制成的半导体膜可以在纳米孔中实现电可调离子电流整流和过滤。我们的模型基于双锥纳米孔中静电势的三维泊松方程的解，并结合了传输模型。该模型预测，对于膜 - 电解质系统的适当偏置，可以实现从欧姆行为到具有零泄漏电流的尖锐整流的转变。此外，纳米孔的离子电流整流和过滤状态对应于p-n膜中的不同电荷状态，这可以通过对n层和p层进行适当偏置来调节。
