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用于纳米级电子制造的金属纳米颗粒直接纳米压印

Direct nanoimprinting of metal nanoparticles for nanoscale electronics fabrication.

作者信息

Ko Seung H, Park Inkyu, Pan Heng, Grigoropoulos Costas P, Pisano Albert P, Luscombe Christine K, Fréchet Jean M J

机构信息

Department of Mechanical Engineering, University of California, Berkeley, California 94720-1740, USA.

出版信息

Nano Lett. 2007 Jul;7(7):1869-77. doi: 10.1021/nl070333v. Epub 2007 Jun 5.

DOI:10.1021/nl070333v
PMID:17547465
Abstract

One-step direct nanoimprinting of metal nanoparticles was investigated to fabricate nano-/microscale metallic structures such as nanodot and nanowire arrays. This was done at low temperatures and pressures, utilizing the low melting temperature and viscosity of metal nanoparticle solutions. Through precise control of the fluidic properties of the nanoparticle solution and the mold design, high-quality nanoscale features with no or negligible residual layer were nanoimprinted. Nanoscale electronic devices were also demonstrated, including nanowire resistors and nanochannel organic field effect transistors with an air-stable semiconducting polymer.

摘要

研究了金属纳米颗粒的一步直接纳米压印技术,以制造纳米/微米级金属结构,如纳米点和纳米线阵列。这是在低温和低压下进行的,利用了金属纳米颗粒溶液的低熔点温度和粘度。通过精确控制纳米颗粒溶液的流体性质和模具设计,成功压印出具有无残留层或残留层可忽略不计的高质量纳米级特征。还展示了纳米级电子器件,包括纳米线电阻器和具有空气稳定半导体聚合物的纳米通道有机场效应晶体管。

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