Lee J H, Oh Y J, Kim T Y, Choi M R, Jo W
Department of Physics and Division of Nanosciences, Ewha Womans University, Seoul 120-750, Republic of Korea.
Ultramicroscopy. 2007 Oct;107(10-11):954-7. doi: 10.1016/j.ultramic.2007.02.039. Epub 2007 May 5.
Relaxor ferroelectric PbMg(1/3)Nb(2/3)O(3)(65%)-PbTiO(3)(35%) (PMN-35PT) thin films were grown by a sol-gel method on Pt(111)/TiO(2)/SiO(2)/Si(100) substrates. Piezoresponse and poling behavior appear to have a relation with the relaxor behavior of the materials. Piezoelectric images were studied in a number of regions on the films with subsequent statistical analysis of the obtained data using the contact mode of scanning force microscopy. Hysteresis loops were observed with external field applied over a wide range of the vibration frequency. The piezoelectric coefficient, d(33), and the crystallographic electrostrictive constant, Q(33), were also determined as 100pm/V and 2.8x10(-3)C(-2)m(4), respectively.
采用溶胶-凝胶法在Pt(111)/TiO(2)/SiO(2)/Si(100)衬底上生长弛豫铁电体PbMg(1/3)Nb(2/3)O(3)(65%)-PbTiO(3)(35%)（PMN-35PT）薄膜。压电力响应和极化行为似乎与材料的弛豫行为有关。使用扫描力显微镜的接触模式，在薄膜的多个区域研究了压电图像，并对所得数据进行了后续统计分析。在宽振动频率范围内施加外场时观察到了磁滞回线。压电系数d(33)和晶体电致伸缩常数Q(33)也分别确定为100pm/V和2.8×10(-3)C(-2)m(4)。
