Luo H M, Jain M, Baily S A, McCleskey T M, Burrell A K, Bauer E, DePaula R F, Dowden P C, Civale L, Jia Q X
Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
J Phys Chem B. 2007 Jul 5;111(26):7497-500. doi: 10.1021/jp0718451. Epub 2007 Jun 16.
Epitaxial ferromagnetic SrRuO3 thin films with a room-temperature resistivity of 300 microOmega.cm have been successfully grown on LaAlO3(001) substrates at a processing temperature in the range of 550-750 degrees C by a polymer-assisted deposition technique. X-ray diffraction analysis shows good epitaxial quality of SrRuO3 thin films, giving values of the full width at half-maximum (FWHM) of 0.42 degrees from the rocking curve for the (002) reflection and 1.1 degrees from the in-plane phi scan for the (204) reflection. Both the resistivity and the magnetization versus temperature measurements show that the SrRuO3 films are ferromagnetic with a transition temperature of 160 K. The spontaneous magnetization near the ferromagnetic transition follows the scaling law, and the low-temperature magnetization follows the Bloch law.
通过聚合物辅助沉积技术,在550 - 750摄氏度的处理温度下,已成功在LaAlO3(001)衬底上生长出室温电阻率为300微欧·厘米的外延铁磁SrRuO3薄膜。X射线衍射分析表明SrRuO3薄膜具有良好的外延质量,(002)反射的摇摆曲线半高宽(FWHM)值为0.42度,(204)反射的面内φ扫描半高宽值为1.1度。电阻率和磁化强度随温度的测量均表明,SrRuO3薄膜是铁磁性的,转变温度为160 K。铁磁转变附近的自发磁化遵循标度律,低温磁化遵循布洛赫定律。